SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE

To provide a semiconductor device capable of achieving a transistor with a short gate length.SOLUTION: A semiconductor device according to an embodiment comprises: a semiconductor layer having a first surface and a second surface opposed to the first surface; a gate electrode; a gate insulating laye...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: UECHI TADAYOSHI, IZUMIDA TAKASHI, SHIMANE TAKESHI
Format: Patent
Sprache:eng ; jpn
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!