SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE

To provide a semiconductor device capable of achieving a transistor with a short gate length.SOLUTION: A semiconductor device according to an embodiment comprises: a semiconductor layer having a first surface and a second surface opposed to the first surface; a gate electrode; a gate insulating layer provided between the first surface and the gate electrode; and a pair of first p-type impurity regions that are provided in the semiconductor layer at both sides of the gate electrode, contain boron, carbon and germanium, have a coupling structure of boron and carbon, have a first boron concentration and a first depth in a direction from the first surface toward the second surface, and in which a mutual distance is a first distance.SELECTED DRAWING: Figure 1 【課題】ゲート長の短いトランジスタの実現を可能とする半導体装置を提供する。【解決手段】実施形態の半導体装置は、第１の面と第１の面と対向する第２の面とを有する半導体層と、ゲート電極と、第１の面とゲート電極との間に設けられたゲート絶縁層と、ゲート電極の両側の半導体層の中に設けられ、ボロンと炭素とゲルマニウムを含み、ボロンと炭素の結合構造を有し、第１のボロン濃度と、第１の面から第２の面に向かう方向に第１の深さを有し、互いの間の距離が第１の距離である１対の第１のｐ型不純物領域と、を備える。【選択図】図１