SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND PROGRAM

To provide a technique capable of controlling the amount of radicals supplied in a radial direction of a substrate in an apparatus that supplies and processes plasma.SOLUTION: A substrate processing apparatus includes: a processing chamber 205 that processes a substrate 100; a substrate support 210 that supports the substrate in the processing chamber; a plurality of reaction gas supply holes 235 and 236 provided in a processing chamber wall facing a substrate support surface 211 of the substrate support; a plurality of reaction gas supply units having reaction gas supply pipes 241 and 261 fixed to the processing chamber and communicating with each of the reaction gas supply holes, and a plasma generation unit provided upstream of the reaction gas supply pipes; and a plasma control unit connected to the plasma generation unit and individually controlling the plurality of plasma generation units.SELECTED DRAWING: Figure 1 【課題】プラズマを供給して処理する装置において、基板の径方向に対して供給されるラジカルの量を制御可能な技術を提供する。【解決手段】基板１００を処理する処理室２０５と、処理室で基板を支持する基板支持部２１０と、基板支持部の基板支持面２１１と対向する処理室の壁に設けられた複数の反応ガス供給孔２３５，２３６と、処理室に固定され、反応ガス供給孔のそれぞれに連通する反応ガス供給管２４１，２６１と、反応ガス供給管の上流に設けられたプラズマ生成部とを有する複数の反応ガス供給部と、プラズマ生成部に接続され、複数のプラズマ生成部を個別に制御するプラズマ制御部とを有する。【選択図】図１