SEMICONDUCTOR DEVICE FOR ELECTRIC POWER, POWER CONVERSION DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE FOR ELECTRIC POWER AND MANUFACTURING METHOD FOR POWER CONVERSION DEVICE

To provide a semiconductor device capable of suppressing degradation in the insulation reliability of a semiconductor device by improving heat radiation performance in an ineffective region of a semiconductor element.SOLUTION: The semiconductor device for electric power includes: a semiconductor ele...

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Bibliographische Detailangaben
Hauptverfasser: BEPPU KEIJI, KITAMURA SHUICHI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a semiconductor device capable of suppressing degradation in the insulation reliability of a semiconductor device by improving heat radiation performance in an ineffective region of a semiconductor element.SOLUTION: The semiconductor device for electric power includes: a semiconductor element (2) disposed on a top face of an insulation substrate (5) through a junction layer (3); a first top face heat dissipation member (4a) partially formed on the top face of the semiconductor element. The semiconductor element has a cell region (101) and an ineffective region (102) surrounding the cell region in plan view. The first top face heat dissipation member is formed on the top face corresponding to the ineffective region of the semiconductor element.SELECTED DRAWING: Figure 3 【課題】半導体素子の無効領域における放熱性を向上させることによって、半導体装置の絶縁信頼性の低下を抑制する。【解決手段】電力用半導体装置は、絶縁基板(5)の上面に接合層(3)を介して配置される半導体素子(2)と、半導体素子の上面に部分的に形成される第1の上面放熱部材(4a)とを備える。半導体素子は、セル領域(101)と、平面視においてセル領域を囲む無効領域(102)とを有し、第1の上面放熱部材は、半導体素子の無効領域に対応する上面に形成される。【選択図】図3