METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL, AND SILICON WAFER

To provide a method for manufacturing a silicon single crystal having a wide pulling speed margin, an oxygen concentration of 4×10atoms/cmor less and a small in-plane variation of resistivity without detecting not only a Grown-in defect but also an oxygen deposit after heat treatment for oxygen depo...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HARADA KAZUHIRO, KAJIWARA KAORU
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING METALLURGY PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TESTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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