METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL, AND SILICON WAFER

To provide a method for manufacturing a silicon single crystal having a wide pulling speed margin, an oxygen concentration of 4×10atoms/cmor less and a small in-plane variation of resistivity without detecting not only a Grown-in defect but also an oxygen deposit after heat treatment for oxygen deposit evaluation.SOLUTION: A method for manufacturing a silicon single crystal 3 having a nitrogen concentration of 1×10atoms/cmor more and 5×10atoms/cmor less and an oxygen concentration of 1×10atoms/cmor more and 4×10atoms/cmor less by the Czochralski method comprises: forming a silicon melt 2 added with nitrogen; setting a magnetic field center position in a direction vertical to a cusp field above the silicon melt 2; and pulling the silicon single crystal 3 at a pulling speed without generating a Grown-in defect while applying the cusp field to the silicon melt 2.SELECTED DRAWING: Figure 1 【課題】引き上げ速度マージンが広く、酸素濃度が４×１０１７ａｔｏｍｓ／ｃｍ３以下であり、抵抗率の面内ばらつきが小さく、Grown-in欠陥のみならず酸素析出評価熱処理後に酸素析出物が検出されないシリコン単結晶の製造方法を提供する。【解決手段】窒素濃度が１×１０１４ａｔｏｍｓ／ｃｍ３以上５×１０１５ａｔｏｍｓ／ｃｍ３以下であり、酸素濃度が１×１０１７ａｔｏｍｓ／ｃｍ３以上４×１０１７ａｔｏｍｓ／ｃｍ３以下であるシリコン単結晶３をチョクラルスキー法により製造する方法であって、窒素が添加されたシリコン融液２を生成し、カスプ磁場の垂直方向の磁場中心位置をシリコン融液２の上方に設定し、シリコン融液２にカスプ磁場を印加しながらGrown-in欠陥が発生しない引き上げ速度でシリコン単結晶３を引き上げる。【選択図】図１