SEMICONDUCTOR DEVICE
To provide a new arrangement constitution with an SJ-MOSFET part and an IGBT part in one semiconductor chip, in addition to mounting of the SJ-MOSFET part and an IGBT part on one semiconductor chip.SOLUTION: The semiconductor device includes: a semiconductor substrate; at least two super-junction tr...
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| Format: | Patent |
| Sprache: | eng ; jpn |
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| Zusammenfassung: | To provide a new arrangement constitution with an SJ-MOSFET part and an IGBT part in one semiconductor chip, in addition to mounting of the SJ-MOSFET part and an IGBT part on one semiconductor chip.SOLUTION: The semiconductor device includes: a semiconductor substrate; at least two super-junction transistor regions mounted on the semiconductor substrate; and at least one IGBT region provided in a region sandwiched between at least two of the super-junction transistor regions in a cross section cut within a plane perpendicular to the semiconductor substrate.SELECTED DRAWING: Figure 1
【課題】ＳＪ-ＭＯＳＦＥＴおよびＩＧＢＴを１つの半導体チップに設ける。加えて、１つの半導体チップにおいて、ＳＪ-ＭＯＳＦＥＴ部とＩＧＢＴ部との新規な配置構成を提供する。【解決手段】半導体基板と、半導体基板に設けられた２以上の超接合型トランジスタ領域と、半導体基板に垂直な面で切断した断面において、２以上の前記超接合型トランジスタ領域が挟む領域に設けられた１以上のＩＧＢＴ領域とを備える半導体装置を提供する。【選択図】図１ |
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