HETEROJUNCTION BIPOLAR TRANSISTOR AND SEMICONDUCTOR DEVICE

To provide an HBT (Heterojunction Bipolar Transistor) of which the destruction due to avalanche multiplication can be suppressed without involving increase in a chip size.SOLUTION: A first sub-collector layer serves as an inflow path of a collector current flowing through a collector layer of a hete...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OBE ISAO, TSUTSUI TAKAYUKI, TANAKA SATOSHI, UMEMOTO YASUNARI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!