FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD

To prevent a film deposition gas from coming around below a base part and attaching the base part as the film deposition gas is supplied to a substrate mounted on the base part and a film is deposited.SOLUTION: Provided is a film deposition apparatus that a film deposition gas is supplied to a subst...

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Bibliographische Detailangaben
Hauptverfasser: KEIMOTO YUKI, KUWATA HIROTAKA, NUNOSHIGE HIROSHI, FUJII YASUSHI
Format: Patent
Sprache:eng ; jpn
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Beschreibung
Zusammenfassung:To prevent a film deposition gas from coming around below a base part and attaching the base part as the film deposition gas is supplied to a substrate mounted on the base part and a film is deposited.SOLUTION: Provided is a film deposition apparatus that a film deposition gas is supplied to a substrate mounted on a base part in a treatment vessel from a film deposition gas supply part facing the base part, the film deposition apparatus having a first annular body arranged so as to surround a peripheral of the base part via a gap, and a second annular body arranged in an inner peripheral edge of the first annular body and extending below. A third annular body is also arranged that includes a channel forming plane across an inner peripheral surface of the second annular body to a lower edge surface from a peripheral of the base part.SELECTED DRAWING: Figure 4 【課題】載置部に載置した基板に成膜ガスを供給して成膜するにあたって、成膜ガスが載置部の下方に回り込み、載置部に付着することを抑制する。【解決手段】処理容器内の載置部に載置した基板に載置部と対向する成膜ガス供給部から成膜ガスを供給して成膜する成膜装置において、載置部の周囲を隙間を介して囲むように第1の環状体を設け、第1の環状体の内周縁に下方に向けて伸びる第2の環状体を設けている。また載置部の周縁から第2の環状体の内周面から下端面に亘って沿う流路形成面を含む第3の環状体を設けている。【選択図】図4