CHEMICAL MECHANICAL PLANARIZATION COMPOSITION FOR POLISHING OXIDE MATERIALS AND METHOD OF USE THEREOF

To provide a polishing composition that can provide high removal rates of silicon oxide, high planarization efficiency and excellent slurry stability.SOLUTION: A polishing composition comprises ceria coated silica particles and organic acids having one selected from the group consisting of a sulfoni...

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Hauptverfasser:	ANU MALLIKARJUNAN, JOSEPH D ROSE, TSAI MING-SHIH, CHRIS KEH-YEUAN LI, YANG RUNG-JE, SHI XIAOBO, LEE CHIAIEN, ZHOU HONGJUN
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MANUFACTURE OR TREATMENT THEREOF MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	To provide a polishing composition that can provide high removal rates of silicon oxide, high planarization efficiency and excellent slurry stability.SOLUTION: A polishing composition comprises ceria coated silica particles and organic acids having one selected from the group consisting of a sulfonic acid group, a phosphonic acid group, a pyridine compound and combinations thereof, and has a pH of 5-10 and an electrical conductivity of 0.2-10 millisiemens per centimeter. The polishing composition provides very high silicon oxide removal rates for advanced semiconductor device manufacturing.SELECTED DRAWING: None 【課題】酸化ケイ素の高い除去速度、高い平坦化効率、及び優れたスラリー安定性を提供することができる研磨組成物の提供。【解決手段】セリアコートシリカ粒子と、スルホン酸基、ホスホン酸基、ピリジン化合物、及びこれらの組み合わせからなる群から選択される１種を有する有機酸とを含み、５〜１０のｐＨを有し、０．２〜１０ミリジーメンス毎センチメートルの電気伝導率を有する研磨組成物は、最新の半導体デバイス製造に関する非常に高い酸化ケイ素除去速度を提供する。【選択図】なし