PLASMA PROCESSING DEVICE

To provide a technique capable of highly accurately controlling a process.SOLUTION: A plasma processing device 1 comprises a processing chamber 104 in which a sample (wafer 112) is subjected to plasma processing, a first high-frequency power supply (power supply 109 for electromagnetic wave generation) which supplies a first high-frequency power 161 for plasma generation, a sample stand (electrode 111 for sample placement) on which the sample is placed, and a second high-frequency power supply (high-frequency bias power supply 114) which supplies a second high-frequency power 162 to the sample stand. The plasma processing device further comprises a pulse generation unit 121 which generates a first pulse for temporally modulating the first high-frequency power 161 and a second pulse for temporally modulating the second high-frequency power 162. The first pulse includes an off period, a first period, and a second period. An amplitude value of the first period is a finite value. An amplitude of the second period is larger than that of the first period, and the second pulse becomes an on period during the second period.SELECTED DRAWING: Figure 1 【課題】高精度にプロセスを制御することができる技術を提供する。【解決手段】プラズマ処理装置１は、試料（ウエハ１１２）がプラズマ処理される処理室１０４と、プラズマを生成するための第１高周波電力１６１を供給する第１高周波電源（電磁波発生用電源１０９）と、試料が載置される試料台（試料載置用電極１１１）と、試料台に第２高周波電力１６２を供給する第２高周波電源（高周波バイアス電源１１４）とを備え、第１高周波電力１６１を時間変調するための第１パルスと第２高周波電力１６２を時間変調するための第２パルスを生成するパルス生成ユニット１２１をさらに備える。第１パルスは、オフ期間と第１期間と第２期間とを有し、第１期間の振幅値は、有限の値であり、第２期間の振幅は、第１期間の振幅より大きく、第２パルスは、第２期間の間、オン期間となる。【選択図】図１