PZT ELEMENT, AND PZT ELEMENT PRODUCTION METHOD

To provide a PZT element that does not have high breakdown voltage but has high durability.SOLUTION: A PZT element 5 is obtained by sputtering a ground layer 23 composed of an LaNiOthin film grown in a range of 485°C or more and 585°C or less with a sputtering target composed of PZT having Ni added...

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Bibliographische Detailangaben
Hauptverfasser:	TSUYUKI TATSURO, KIMURA ISAO, JINBO TAKETO, KOBAYASHI HIROKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a PZT element that does not have high breakdown voltage but has high durability.SOLUTION: A PZT element 5 is obtained by sputtering a ground layer 23 composed of an LaNiOthin film grown in a range of 485°C or more and 585°C or less with a sputtering target composed of PZT having Ni added thereto, and forming a PZT layer 24 containing Ni of 0.1 at% or more and 5 at% or less.SELECTED DRAWING: Figure 1 【課題】破壊電圧は高くないが、耐久性が高いＰＺＴ素子を提供する。【解決手段】４８５℃以上５８５℃以下の温度範囲の温度で成長させたＬａＮｉＯ3薄膜から成る下地層２３上に、Ｎｉが添加されたＰＺＴから成るスパッタリングターゲットをスパッタリングし、Ｎｉが０．１ａｔ％以上５ａｔ％以下の範囲で含有されたＰＺＴ層２４を形成することで得られる、ＰＺＴ素子５。【選択図】図１