METHOD OF FORMING LIGHT EMISSION DIODE ARRAY ON BACK PLANE

To provide a backplane optionally having stepped horizontal surfaces and optionally embedding metal interconnect structures therein.SOLUTION: First light emitting devices 10B on a first transfer substrate are disposed on the first conductive bonding structures 431, and a first subset of the first light emitting devices 10B is bonded to the first conductive bonding structures 431. Laser irradiation from a laser 477 can be employed to selectively disconnect the first subset of the first light emitting devices 10B from the first transfer substrate while a second subset of the first light emitting devices 10B remains attached to the first transfer substrate. Additional devices on each additional transfer substrate can be bonded to additional conductive bonding structures 433 on the backplane 401 and a third light emission device 10R can be bonded employing the same method provided that the additional devices are not present in positions that would overlap with pre-existing first light emitting devices 10B or devices on the backplane 401 at a bonding position.SELECTED DRAWING: Figure 32M 【課題】オプションで段付き水平面を有し、かつ、オプションで金属相互接続構造がそのなかに埋設されているバックプレーンを提供する。【解決手段】第１移送基板上の第１発光デバイス１０Ｂが第１導電性接着構造４３１上に置かれ、第１発光デバイス１０Ｂの第１部分集合が第１導電性接着構造４３１に接着される。第１発光デバイス１０Ｂの第２部分集合が第１移送基板に取り付けられたままである間に、レーザ４７７からの放射を用いて、第１移送基板から第１発光デバイス１０Ｂの第１部分集合を選択的に切り離すことができる。追加的デバイスが既存の第１発光デバイス１０Ｂまたはバックプレーン４０１上の接着位置にあるデバイスと重なる位置に存在しない限り、各追加的移送基板上の追加的デバイスをバックプレーン４０１上の追加的導電性接着構造４３３に、同じ方法を用いて第３発光デバイス１０Ｒを接着することができる。【選択図】図３２Ｍ