POLISHING SLURRY COMPOSITION

To provide a polishing slurry composition including colloidal silica abrasive particles that may improve a surface planarization process of a thin film applied to a semiconductor device and a display device.SOLUTION: A polishing slurry composition comprises: colloidal silica abrasive particles; a me...

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Bibliographische Detailangaben
Hauptverfasser:	HWANG JINSOOK, LEE SANGMI, SHIN NARA, KONG HYUNGOO, HWANG INSEOL
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	To provide a polishing slurry composition including colloidal silica abrasive particles that may improve a surface planarization process of a thin film applied to a semiconductor device and a display device.SOLUTION: A polishing slurry composition comprises: colloidal silica abrasive particles; a metal oxide monomolecular complexing agent; an oxidizer; and a pH adjusting agent and/or a water-soluble polymer. The colloidal silica abrasive particles are included in the slurry composition in an amount from 0.0001 pts.wt. to 20 pts.wt.SELECTED DRAWING: Figure 1 【課題】半導体素子及びディスプレイ素子に適用される薄膜の表面平坦化工程を改善させ得る、コロイダルシリカの研磨粒子を含む研磨用スラリー組成物の提供。【解決手段】コロイダルシリカの研磨粒子と、金属酸化物単分子錯化剤と、酸化剤と、ｐＨ調整剤、水溶性ポリマー又はこの２つとを含む、研磨用スラリー組成物。コロイダルシリカの研磨粒子は、スラリー組成物に対して０．０００１重量部ないし２０重量部で含まれる、研磨用スラリー組成物。【選択図】図１