SEMICONDUCTOR DEVICE
To provide a semiconductor device capable of increasing SOA by increasing a transition voltage.SOLUTION: A collector layer, a base layer, and an emitter layer disposed on a substrate constitute a bipolar transistor. An emitter electrode makes ohmic contact with the emitter layer. The emitter layer h...
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| Sprache: | eng ; jpn |
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| Zusammenfassung: | To provide a semiconductor device capable of increasing SOA by increasing a transition voltage.SOLUTION: A collector layer, a base layer, and an emitter layer disposed on a substrate constitute a bipolar transistor. An emitter electrode makes ohmic contact with the emitter layer. The emitter layer has a shape that is long in one direction in plan view. The dimensional difference in the longitudinal direction of the emitter layer between the ohmic contact interface where the emitter layer and the emitter electrode make ohmic contact and the emitter layer is larger than the dimensional difference in the width direction of the emitter layer between the emitter layer and the ohmic contact interface.SELECTED DRAWING: Figure 4
【課題】遷移電圧を増大させてＳＯＡを拡大することが可能な半導体装置を提供する。【解決手段】基板の上に配置されたコレクタ層、ベース層、及びエミッタ層がバイポーラトランジスタを構成する。エミッタ電極がエミッタ層にオーミック接触する。エミッタ層は平面視において一方向に長い形状を持つ。エミッタ層とエミッタ電極とがオーミック接触するオーミック接触界面とエミッタ層との、エミッタ層の長手方向に関する寸法差が、エミッタ層とオーミック接触界面との、エミッタ層の幅方向に関する寸法差よりも大きい。【選択図】図４ |
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