CLEANING METHOD AND LAMINATE OF ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE

To provide an aluminum nitride single crystal substrate from which a fine foreign substance having a size of 1 μm or less existing on the substrate surface is effectively removed, and a laminate including the substrate.SOLUTION: An aluminum nitride single crystal substrate has less than 1 foreign ma...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	ARIYUKI MASAO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	To provide an aluminum nitride single crystal substrate from which a fine foreign substance having a size of 1 μm or less existing on the substrate surface is effectively removed, and a laminate including the substrate.SOLUTION: An aluminum nitride single crystal substrate has less than 1 foreign matter greater than 1 μm per 400 μmon the substrate surface, less than 1 foreign matter 1 μm or less, and has the root mean square roughness per 4 μmon the substrate surface of 0.06 to 0.15 nm.SELECTED DRAWING: None 【課題】基板表面に存在する大きさが１μｍ以下の微細な異物が効果的に除去された窒化アルミニウム単結晶基板および、基板を含む積層体を提供する。【解決手段】窒化アルミニウム単結晶基板は、基板表面における４００μｍ２あたりの１μｍより大きい異物の数が１個未満であり、１μｍ以下の異物の数が１個未満であり、且つ基板表面の４μｍ２あたりの二乗平均粗さが０．０６〜０．１５ｎｍである。【選択図】なし