PHOTORESISTS AND METHODS FOR USE THEREOF

To provide novel photoresists that comprise an Si-containing component, are particularly useful for ion implant lithography applications, and can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.SOLUTION: A chemically am...

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Bibliographische Detailangaben
1. Verfasser:	GERHARD POHLERS
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	To provide novel photoresists that comprise an Si-containing component, are particularly useful for ion implant lithography applications, and can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.SOLUTION: A chemically amplified positive photoresist composition comprises: an adhesion-promoting component comprising one or more Si-containing groups; a resin that is substantially or completely free of phenyl or other aromatic groups; and a photoactive component. Also provided is a semiconductor wafer subjected to ion implantation through relief images made of the chemically amplified positive photoresist composition on the semiconductor wafer.SELECTED DRAWING: None 【課題】ＳｉＯＮ、酸化ケイ素、窒化ケイ素及び、他の無機表面のような下地無機表面に対して良好な接着性を示しうる、イオン注入リソグラフィ用途に特に有用な、Ｓｉ含有成分を含む新規のフォトレジストの提供。【解決手段】１以上のＳｉ含有基を含む接着促進成分、及び、実質的に若しくは完全にフェニル若しくは他の芳香族基を含まない樹脂、及び光活性成分、を含む化学増幅ポジ型フォトレジスト組成物。及び、半導体基体上の化学増幅ポジ型フォトレジスト組成物からなるレリーフ像を通して、イオン注入された半導体基体。【選択図】なし