POLYAMIDE ACID, POLYIMIDE, RESIN FILM AND METAL-CLAD LAMINATE

To provide an insulating layer material of a circuit board which can suppress occurrence of warpage while coping with a higher frequency in association with miniaturization/higher performance of an electronic apparatus.SOLUTION: In a resin film, at least one layer of polyimide layers is formed of a...

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Bibliographische Detailangaben
Hauptverfasser: SHIBASAKI TAKUYA, ANDO TOMONORI, MORI AKIRA
Format: Patent
Sprache:eng ; jpn
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Beschreibung
Zusammenfassung:To provide an insulating layer material of a circuit board which can suppress occurrence of warpage while coping with a higher frequency in association with miniaturization/higher performance of an electronic apparatus.SOLUTION: In a resin film, at least one layer of polyimide layers is formed of a non-thermoplastic polyimide obtained by reaction of a diamine component and an acid anhydride component, a dielectric constant at a frequency of 3 GHz is 3.37 or less and a dielectric loss tangent is 0.0098 or less, and contains 40 mol% or more of a diamine compound selected from 2,2'-dimethyl-4,4'-diaminobiphenyl(m-TB), 2,2'-diethyl-4,4'-diaminobiphenyl(m-EB) and 2,2'-di-n-propyl-4,4'-diaminobiphenyl(m-NPB) with respect to the total diamine component, and 50-100 mol% of a tetracarboxylic acid anhydride selected from pyromellitic anhydride (PMDA) and 3,3',4,4'-biphenyltetracarboxylic acid dianhydride (BPDA) with respect to the total acid anhydride component.SELECTED DRAWING: None 【課題】電子機器の小型化・高性能化に伴う高周波化への対応を可能としながら、反りの発生を抑制できる回路基板の絶縁層材料を提供する。【解決手段】ポリイミド層の少なくとも1層が、ジアミン成分と酸無水物成分とを反応させて得られる非熱可塑性のポリイミドから形成され、3GHzの周波数における誘電率が3.37以下、誘電正接が0.0098以下であり、2,2'−ジメチル−4,4'−ジアミノビフェニル(m−TB)、2,2'−ジエチル−4,4'−ジアミノビフェニル(m−EB)及び2,2'−ジ−n−プロピル−4,4'−ジアミノビフェニル(m−NPB)から選ばれるジアミン化合物を、全ジアミン成分に対し40モル%以上、無水ピロメリット酸(PMDA)及び3,3',4,4'-ビフェニルテトラカルボン酸二無水物(BPDA)から選ばれるテトラカルボン酸無水物を、全酸無水物成分に対し50〜100モル%含む樹脂フィルム。【選択図】なし