MULTI-JUNCTION LIGHT ENERGY CONVERSION DEVICE AND DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD OF SRZN2N2

To provide a multi-junction light energy conversion device including a material having a bandgap suitable for a light energy conversion layer located upstream in the light incident direction.SOLUTION: Disclosed light energy conversion element includes a first light energy conversion layer containing...

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Hauptverfasser:	OBA FUMIYASU, HADO KAZUHITO, KANEKO YASUSHI, UENO KOKI, KUMAGAI YU, KURAFUCHI TAKAHIRO, KIKUCHI RYOSUKE, NAKAMURA TORU
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	To provide a multi-junction light energy conversion device including a material having a bandgap suitable for a light energy conversion layer located upstream in the light incident direction.SOLUTION: Disclosed light energy conversion element includes a first light energy conversion layer containing SrZnN, and a second light energy conversion layer containing light energy conversion material. The light energy conversion materials have a narrower bandgap than SrZnN.SELECTED DRAWING: Figure 1 【課題】光の入射方向において上流側に位置する光エネルギー変換層に好適なバンドギャップを有する材料を含む多接合型光エネルギー変換素子を提供する。【解決手段】本開示による光エネルギー変換素子は、ＳｒＺｎ2Ｎ2を含有する第１光エネルギー変換層、および光エネルギー変換材料を含有する第２光エネルギー変換層を具備する。前記光エネルギー変換材料は、ＳｒＺｎ2Ｎ2よりも狭いバンドギャップを有する。【選択図】図１