THIN FILM CAPACITOR MANUFACTURING METHOD AND THIN FILM CAPACITOR

To provide a thin film capacitor manufacturing method and a thin film capacitor which can suppress an electrode layer from being excessively etched.SOLUTION: A method for manufacturing a thin film capacitor 1 comprises: a lamination step of laminating a plurality of electrode layers (internal electr...

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Hauptverfasser: UEJIMA SATOSHI, MATSUZAKA NORIHIKO, NAKAMOTO JUNKI, KUMAGAI MICHIHIRO
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a thin film capacitor manufacturing method and a thin film capacitor which can suppress an electrode layer from being excessively etched.SOLUTION: A method for manufacturing a thin film capacitor 1 comprises: a lamination step of laminating a plurality of electrode layers (internal electrode layers 11 or base electrode layers 13) and dielectric films 12' each making a dielectric layer 12 so as to alternate, thereby forming a laminate W serving as a capacitance part 10; an etching step of etching the laminate W by a plasma etching device 100 to form an opening 14 extending in a lamination direction; an analyzing step S2 of making analysis of components that plasma contains during the etching step; and a stopping step S4 of stopping the etching when a component detected in analysis in the analyzing step S2 is matched to a component of the electrode layer which is a target.SELECTED DRAWING: Figure 5 【課題】電極層が過度にエッチングされることを抑制可能な薄膜コンデンサの製造方法及び薄膜コンデンサを提供する。【解決手段】薄膜コンデンサ1の製造方法は、複数の電極層(内部電極層11又は下地電極層13)と、誘電体層12となる誘電体膜12'とを交互に積層して容量部10となる積層体Wを形成する積層工程と、プラズマエッチング装置100を用いて、積層体Wに対してエッチングを行い積層方向に延びる開口14を形成するエッチング工程と、エッチング工程の最中に、プラズマに含まれる成分を分析する分析工程S2と、分析工程S2での分析において検出された成分が目標となる電極層の成分と一致した場合に、エッチングを停止する停止工程S4と、を含む。【選択図】図5