SILICON SUBSTRATE ANALYSIS METHOD

To provide a silicon substrate analysis method with which it is possible to accurately analyze, by an ICP-MS, an impurity such as trace metal on a silicon substrate on which a thick nitride film is formed.SOLUTION: Provided is an analysis method using a silicon substrate analyzer 1 comprising a load port 10, a substrate conveyance robot 20, an aligner 30, a drying chamber 50, a vapor phase decomposing chamber 40, an analysis scan port 60 having an analysis stage 61 and a nozzle 62 for substrate analysis, analysis liquid collection means 70, and analysis means 80 for inductive coupling plasma analysis. The analysis method is characterized in that a silicone substrate W having a nitride film formed thereon is subjected to the process of sweeping and recovering the silicon substrate surface with a recovery liquid that is a mixture of hydrofluoric acid and hydrogen peroxide water by the nozzle for substrate analysis, the recovery liquid thereafter is discharged to the silicon substrate surface and dried by heating, a strong acid solution or strong alkaline solution is discharged and dried by heating, the silicon substrate surface is swept and recovered by an analysis liquid, and the analysis liquid is analyzed by an ICP-MS.SELECTED DRAWING: Figure 1 【課題】膜厚の厚い窒化膜が成膜されたシリコン基板における微量金属等の不純物を、ＩＣＰ−ＭＳにより高精度に分析可能なシリコン基板の分析方法を提供する。【解決手段】ロードポート１０、基板搬送ロボット２０、アライナー３０、乾燥室５０、気相分解チャンバー４０、分析ステージ６１及び基板分析用ノズル６２を有する分析スキャンポート６０、分析液採取手段７０、誘導結合プラズマ分析する分析手段８０を備えるシリコン基板用分析装置１を用いた分析方法であって、窒化膜が成膜されたシリコン基板Ｗを、基板分析用ノズルによりフッ化水素酸と過酸化水素水との混合液の回収液でシリコン基板表面を掃引回収し、その後回収液をシリコン基板表面に吐出して加熱乾燥し、強酸溶液又は強アルカリ溶液を吐出して加熱乾燥して、分析液によりシリコン基板表面を掃引して回収し、分析液をＩＣＰ−ＭＳで分析することを特徴とする。【選択図】図１