TRANSDUCER DEVICE

To provide a transducer device which is capable of, when functioning as an actuator, inhibiting the deformation amount of a dielectric layer thereof from being deviated from an intended value due to the surrounding environment of the dielectric layer, without taking any time and effort.SOLUTION: The...

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Bibliographische Detailangaben
Hauptverfasser: OGUCHI SHINJI, TAINAKA TOMOYUKI, TAJIMA YOSHINAO
Format: Patent
Sprache:eng ; jpn
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Beschreibung
Zusammenfassung:To provide a transducer device which is capable of, when functioning as an actuator, inhibiting the deformation amount of a dielectric layer thereof from being deviated from an intended value due to the surrounding environment of the dielectric layer, without taking any time and effort.SOLUTION: The device includes a first conductive rubber layer 2 and a second conductive rubber layer 3 between which a dielectric elastomer layer 1 is disposed, and a third conductive rubber layer 5 and a fourth conductive rubber layer 6 between a measurement portion 1a formed continuously from the first conductive rubber layer is disposed. The device further includes a control unit 8 that deforms the dielectric elastomer layer 1 in the thickness direction by applying voltage corresponding to a command value Vt to the first conductive rubber layer 2 and the second conductive rubber layer 3. The control unit 8 measures the capacitance Cs of the measurement portion 1a via the third conductive rubber layer 5 and the fourth conductive rubber layer 6, obtains the specific dielectric constant εr of the measurement portion 1a on the basis of the measured capacitance Cs, and uses, as the specific dielectric constant εr of the dielectric elastomer layer 1, the specific dielectric constant εr for calculating the command value Vt.SELECTED DRAWING: Figure 1 【課題】アクチュエータとして機能させたときの同誘電層の変形量が誘電層の周辺環境によって意図した値からずれることを、手間をかけることなく抑制できるトランスデューサー装置を提供する。【解決手段】同装置は、誘電エラストマ層1を挟む第1導電ゴム層2及び第2導電ゴム層3と、第1導電ゴム層から連続するように形成されている計測用部位1aを挟む第3導電ゴム層5及び第4導電ゴム層6と、を備える。同装置は、指令値Vtに対応した電圧を第1導電ゴム層2及び第2導電ゴム層3に対し印加することによって誘電エラストマ層1を厚さ方向に変形させる制御部8も備える。制御部8は、第3導電ゴム層5及び第4導電ゴム層6を介して計測用部位1aの静電容量Csを測定し、その測定された静電容量Csに基づいて計測用部位1aの比誘電率εrを求め、その比誘電率εrを誘電エラストマ層1の比誘電率εrとして上記指令値Vtの算出に用いる。【選択図】図1