METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

To form a p-type semiconductor region in a gallium nitride (GaN) based semiconductor by ion implantation.SOLUTION: A method for manufacturing a semiconductor device comprises a first groove forming step, a depositing step, and an ion implanting step. The first groove forming step forms a first groov...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NIWA SHIGEKI, FUJII TAKAHIRO, OZAKI MASAYOSHI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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