SUBSTRATE PROCESSING APPARATUS
To execute substrate processing with substrate warpage suppressed.SOLUTION: A hydrophobizing unit U5 includes a hot plate 21c on which a wafer W to be processed is placed, a suction unit 70 that applies a suction force to the back surface of the wafer W through a plurality of first through holes 211...
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| creator | USHIMARU KOJI ITONAGA SHOJI |
| description | To execute substrate processing with substrate warpage suppressed.SOLUTION: A hydrophobizing unit U5 includes a hot plate 21c on which a wafer W to be processed is placed, a suction unit 70 that applies a suction force to the back surface of the wafer W through a plurality of first through holes 211 and 212 formed in the hot plate 21c and holds the wafer W, and a backside purge gas supply unit 50 that discharges a fluid to a plurality of second through holes 215 formed in the hot plate 21c outside the hot plate 21c as compared to the first through holes 211 and 212, and forms a horizontal air flow toward the outside of the wafer W on the back side of the wafer W.SELECTED DRAWING: Figure 4
【課題】基板の反りを抑制した状態で基板処理を行うこと。【解決手段】疎水化処理ユニットＵ５は、処理対象のウェハＷを載置する熱板２１ｃと、熱板２１ｃに形成された複数の第１貫通孔２１１，２１２を介してウェハＷの裏面に吸引力を付与しウェハＷを保持する吸引部７０と、第１貫通孔２１１，２１２よりも熱板２１ｃの外側において熱板２１ｃに形成された複数の第２貫通孔２１５に流体を吐出し、ウェハＷの裏面側においてウェハＷの外側に向かう水平方向の気流を形成する裏面パージガス供給部５０と、を備える。【選択図】図４ |
| format | Patent |
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【課題】基板の反りを抑制した状態で基板処理を行うこと。【解決手段】疎水化処理ユニットＵ５は、処理対象のウェハＷを載置する熱板２１ｃと、熱板２１ｃに形成された複数の第１貫通孔２１１，２１２を介してウェハＷの裏面に吸引力を付与しウェハＷを保持する吸引部７０と、第１貫通孔２１１，２１２よりも熱板２１ｃの外側において熱板２１ｃに形成された複数の第２貫通孔２１５に流体を吐出し、ウェハＷの裏面側においてウェハＷの外側に向かう水平方向の気流を形成する裏面パージガス供給部５０と、を備える。【選択図】図４</description><language>eng ; jpn</language><subject>APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL ; APPARATUS SPECIALLY ADAPTED THEREFOR ; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PERFORMING OPERATIONS ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; SPRAYING OR ATOMISING IN GENERAL ; TRANSPORTING</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191003&DB=EPODOC&CC=JP&NR=2019169537A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191003&DB=EPODOC&CC=JP&NR=2019169537A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>USHIMARU KOJI</creatorcontrib><creatorcontrib>ITONAGA SHOJI</creatorcontrib><title>SUBSTRATE PROCESSING APPARATUS</title><description>To execute substrate processing with substrate warpage suppressed.SOLUTION: A hydrophobizing unit U5 includes a hot plate 21c on which a wafer W to be processed is placed, a suction unit 70 that applies a suction force to the back surface of the wafer W through a plurality of first through holes 211 and 212 formed in the hot plate 21c and holds the wafer W, and a backside purge gas supply unit 50 that discharges a fluid to a plurality of second through holes 215 formed in the hot plate 21c outside the hot plate 21c as compared to the first through holes 211 and 212, and forms a horizontal air flow toward the outside of the wafer W on the back side of the wafer W.SELECTED DRAWING: Figure 4
【課題】基板の反りを抑制した状態で基板処理を行うこと。【解決手段】疎水化処理ユニットＵ５は、処理対象のウェハＷを載置する熱板２１ｃと、熱板２１ｃに形成された複数の第１貫通孔２１１，２１２を介してウェハＷの裏面に吸引力を付与しウェハＷを保持する吸引部７０と、第１貫通孔２１１，２１２よりも熱板２１ｃの外側において熱板２１ｃに形成された複数の第２貫通孔２１５に流体を吐出し、ウェハＷの裏面側においてウェハＷの外側に向かう水平方向の気流を形成する裏面パージガス供給部５０と、を備える。【選択図】図４</description><subject>APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</subject><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PERFORMING OPERATIONS</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPRAYING OR ATOMISING IN GENERAL</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJALDnUKDglyDHFVCAjyd3YNDvb0c1dwDAhwBIqFBvMwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUknivACMDQ0tDM0tTY3NHY6IUAQAcZyI6</recordid><startdate>20191003</startdate><enddate>20191003</enddate><creator>USHIMARU KOJI</creator><creator>ITONAGA SHOJI</creator><scope>EVB</scope></search><sort><creationdate>20191003</creationdate><title>SUBSTRATE PROCESSING APPARATUS</title><author>USHIMARU KOJI ; ITONAGA SHOJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2019169537A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2019</creationdate><topic>APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</topic><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PERFORMING OPERATIONS</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPRAYING OR ATOMISING IN GENERAL</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>USHIMARU KOJI</creatorcontrib><creatorcontrib>ITONAGA SHOJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>USHIMARU KOJI</au><au>ITONAGA SHOJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING APPARATUS</title><date>2019-10-03</date><risdate>2019</risdate><abstract>To execute substrate processing with substrate warpage suppressed.SOLUTION: A hydrophobizing unit U5 includes a hot plate 21c on which a wafer W to be processed is placed, a suction unit 70 that applies a suction force to the back surface of the wafer W through a plurality of first through holes 211 and 212 formed in the hot plate 21c and holds the wafer W, and a backside purge gas supply unit 50 that discharges a fluid to a plurality of second through holes 215 formed in the hot plate 21c outside the hot plate 21c as compared to the first through holes 211 and 212, and forms a horizontal air flow toward the outside of the wafer W on the back side of the wafer W.SELECTED DRAWING: Figure 4
【課題】基板の反りを抑制した状態で基板処理を行うこと。【解決手段】疎水化処理ユニットＵ５は、処理対象のウェハＷを載置する熱板２１ｃと、熱板２１ｃに形成された複数の第１貫通孔２１１，２１２を介してウェハＷの裏面に吸引力を付与しウェハＷを保持する吸引部７０と、第１貫通孔２１１，２１２よりも熱板２１ｃの外側において熱板２１ｃに形成された複数の第２貫通孔２１５に流体を吐出し、ウェハＷの裏面側においてウェハＷの外側に向かう水平方向の気流を形成する裏面パージガス供給部５０と、を備える。【選択図】図４</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL APPARATUS SPECIALLY ADAPTED THEREFOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL TRANSPORTING |
| title | SUBSTRATE PROCESSING APPARATUS |
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