SUBSTRATE PROCESSING APPARATUS

To execute substrate processing with substrate warpage suppressed.SOLUTION: A hydrophobizing unit U5 includes a hot plate 21c on which a wafer W to be processed is placed, a suction unit 70 that applies a suction force to the back surface of the wafer W through a plurality of first through holes 211 and 212 formed in the hot plate 21c and holds the wafer W, and a backside purge gas supply unit 50 that discharges a fluid to a plurality of second through holes 215 formed in the hot plate 21c outside the hot plate 21c as compared to the first through holes 211 and 212, and forms a horizontal air flow toward the outside of the wafer W on the back side of the wafer W.SELECTED DRAWING: Figure 4 【課題】基板の反りを抑制した状態で基板処理を行うこと。【解決手段】疎水化処理ユニットＵ５は、処理対象のウェハＷを載置する熱板２１ｃと、熱板２１ｃに形成された複数の第１貫通孔２１１，２１２を介してウェハＷの裏面に吸引力を付与しウェハＷを保持する吸引部７０と、第１貫通孔２１１，２１２よりも熱板２１ｃの外側において熱板２１ｃに形成された複数の第２貫通孔２１５に流体を吐出し、ウェハＷの裏面側においてウェハＷの外側に向かう水平方向の気流を形成する裏面パージガス供給部５０と、を備える。【選択図】図４