SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

To provide a substrate processing device which inhibits influence when component liquids of a process liquid are mixed in a discharge nozzle.SOLUTION: A substrate processing device 100 processes a substrate W with a process liquid L. The substrate processing device 100 includes a discharge nozzle 13...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SUGAWARA YUJI, TAKEMATSU YUSUKE, HIGASHI KATSUE, AOKI HIROSHI, NUKUI HIROKI
Format: Patent
Sprache:eng ; jpn
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Beschreibung
Zusammenfassung:To provide a substrate processing device which inhibits influence when component liquids of a process liquid are mixed in a discharge nozzle.SOLUTION: A substrate processing device 100 processes a substrate W with a process liquid L. The substrate processing device 100 includes a discharge nozzle 130 and a supply part 140. The discharge nozzle 130 has a discharge port 132 and a discharge passage 134. The discharge port 132 discharges the process liquid L to the substrate W. The discharge passage 134 communicates with the discharge port 132. The supply port 140 communicates with the discharge passage 134 of the discharge nozzle 130. At least a part of the discharge passage 134 is made of quartz. The supply part 140 has a first supply passage 141 and a second supply passage 142. The first supply passage 141 flows a first component liquid L1 of the process liquid L in the discharge passage 134 of the discharge nozzle 130. The second supply passage 142 flows a second component liquid L2 of the process liquid L in the discharge passage 134 of the discharge nozzle 130.SELECTED DRAWING: Figure 1 【課題】処理液の成分液が吐出ノズルにおいて混合した際の影響を抑制した基板処理装置を提供する。【解決手段】基板処理装置100は基板Wを処理液Lで処理する。基板処理装置100は、吐出ノズル130と、供給部140とを備える。吐出ノズル130は、吐出口132と、吐出流路134とを有する。吐出口132は、基板Wに処理液Lを吐出する。吐出流路134は吐出口132と連絡する。供給部140は、吐出ノズル130の出流路134と連絡する。吐出流路134の少なくとも一部が石英から形成される。供給部140は、第1供給流路141と、第2供給流路142とを有する。第1供給流路141は、処理液Lの第1成分液L1を吐出ノズル130の吐出流路134に流す。第2供給流路142は、処理液Lの第2成分液L2を吐出ノズル130の吐出流路134に流す。【選択図】図1