PLASMA CVD APPARATUS
To provide a plasma CVD apparatus capable of reducing thermal deformation when cleaning an electrode and preventing abnormal discharge during film deposition.SOLUTION: A plasma CVD apparatus 1 comprises: a conductor part 11, an electrode 12, two temperature sensors 51 and 52 for measuring the temper...
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| creator | ASHITAKA YU |
| description | To provide a plasma CVD apparatus capable of reducing thermal deformation when cleaning an electrode and preventing abnormal discharge during film deposition.SOLUTION: A plasma CVD apparatus 1 comprises: a conductor part 11, an electrode 12, two temperature sensors 51 and 52 for measuring the temperatures of the electrode 12 at different positions and a controller 60 for controlling a voltage applied between the electrode 12 and the conductor part 11 or a work piece W. The controller 60 for performing cleaning control each time the deposition of a carbon film on the work piece W is completed reduces a voltage value applied in the next cleaning control than that applied in the last cleaning control when a difference between the temperatures measured by the two temperature sensors 51 and 52 is equal to or more than a predetermined temperature difference to remove the carbon film C2 adhering to the electrode 12.SELECTED DRAWING: Figure 2
【課題】電極をクリーニングする際の熱変形を低減し、成膜時の異常放電を防止することができるプラズマＣＶＤ装置を提供する。【解決手段】プラズマＣＶＤ装置１は、導体部１１と、電極１２と、電極１２の異なる位置の温度を測定する２つの温度センサ５１、５２と、電極１２と導体部１１またはワークＷとの間に印加する電圧を制御する制御装置６０とを備える。制御装置６０は、ワークＷに前記炭素皮膜を成膜する処理が完了するごとにクリーニング制御を行うものであり、２つの温度センサ５１、５２により測定された温度差が、所定の温度差以上となったときに、次回のクリーニング制御において印加する電圧値を、前回のクリーニング制御において印加した電圧値よりも下げて、電極１２に付着した炭素皮膜Ｃ２を除去する。【選択図】図２ |
| format | Patent |
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【課題】電極をクリーニングする際の熱変形を低減し、成膜時の異常放電を防止することができるプラズマＣＶＤ装置を提供する。【解決手段】プラズマＣＶＤ装置１は、導体部１１と、電極１２と、電極１２の異なる位置の温度を測定する２つの温度センサ５１、５２と、電極１２と導体部１１またはワークＷとの間に印加する電圧を制御する制御装置６０とを備える。制御装置６０は、ワークＷに前記炭素皮膜を成膜する処理が完了するごとにクリーニング制御を行うものであり、２つの温度センサ５１、５２により測定された温度差が、所定の温度差以上となったときに、次回のクリーニング制御において印加する電圧値を、前回のクリーニング制御において印加した電圧値よりも下げて、電極１２に付着した炭素皮膜Ｃ２を除去する。【選択図】図２</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOUNDS THEREOF ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190919&DB=EPODOC&CC=JP&NR=2019157150A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190919&DB=EPODOC&CC=JP&NR=2019157150A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ASHITAKA YU</creatorcontrib><title>PLASMA CVD APPARATUS</title><description>To provide a plasma CVD apparatus capable of reducing thermal deformation when cleaning an electrode and preventing abnormal discharge during film deposition.SOLUTION: A plasma CVD apparatus 1 comprises: a conductor part 11, an electrode 12, two temperature sensors 51 and 52 for measuring the temperatures of the electrode 12 at different positions and a controller 60 for controlling a voltage applied between the electrode 12 and the conductor part 11 or a work piece W. The controller 60 for performing cleaning control each time the deposition of a carbon film on the work piece W is completed reduces a voltage value applied in the next cleaning control than that applied in the last cleaning control when a difference between the temperatures measured by the two temperature sensors 51 and 52 is equal to or more than a predetermined temperature difference to remove the carbon film C2 adhering to the electrode 12.SELECTED DRAWING: Figure 2
【課題】電極をクリーニングする際の熱変形を低減し、成膜時の異常放電を防止することができるプラズマＣＶＤ装置を提供する。【解決手段】プラズマＣＶＤ装置１は、導体部１１と、電極１２と、電極１２の異なる位置の温度を測定する２つの温度センサ５１、５２と、電極１２と導体部１１またはワークＷとの間に印加する電圧を制御する制御装置６０とを備える。制御装置６０は、ワークＷに前記炭素皮膜を成膜する処理が完了するごとにクリーニング制御を行うものであり、２つの温度センサ５１、５２により測定された温度差が、所定の温度差以上となったときに、次回のクリーニング制御において印加する電圧値を、前回のクリーニング制御において印加した電圧値よりも下げて、電極１２に付着した炭素皮膜Ｃ２を除去する。【選択図】図２</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOUNDS THEREOF</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJ8HEM9nVUcA5zUXAMCHAMcgwJDeZhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhpaGpuaGpgaOxkQpAgCthB75</recordid><startdate>20190919</startdate><enddate>20190919</enddate><creator>ASHITAKA YU</creator><scope>EVB</scope></search><sort><creationdate>20190919</creationdate><title>PLASMA CVD APPARATUS</title><author>ASHITAKA YU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2019157150A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOUNDS THEREOF</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>ASHITAKA YU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ASHITAKA YU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA CVD APPARATUS</title><date>2019-09-19</date><risdate>2019</risdate><abstract>To provide a plasma CVD apparatus capable of reducing thermal deformation when cleaning an electrode and preventing abnormal discharge during film deposition.SOLUTION: A plasma CVD apparatus 1 comprises: a conductor part 11, an electrode 12, two temperature sensors 51 and 52 for measuring the temperatures of the electrode 12 at different positions and a controller 60 for controlling a voltage applied between the electrode 12 and the conductor part 11 or a work piece W. The controller 60 for performing cleaning control each time the deposition of a carbon film on the work piece W is completed reduces a voltage value applied in the next cleaning control than that applied in the last cleaning control when a difference between the temperatures measured by the two temperature sensors 51 and 52 is equal to or more than a predetermined temperature difference to remove the carbon film C2 adhering to the electrode 12.SELECTED DRAWING: Figure 2
【課題】電極をクリーニングする際の熱変形を低減し、成膜時の異常放電を防止することができるプラズマＣＶＤ装置を提供する。【解決手段】プラズマＣＶＤ装置１は、導体部１１と、電極１２と、電極１２の異なる位置の温度を測定する２つの温度センサ５１、５２と、電極１２と導体部１１またはワークＷとの間に印加する電圧を制御する制御装置６０とを備える。制御装置６０は、ワークＷに前記炭素皮膜を成膜する処理が完了するごとにクリーニング制御を行うものであり、２つの温度センサ５１、５２により測定された温度差が、所定の温度差以上となったときに、次回のクリーニング制御において印加する電圧値を、前回のクリーニング制御において印加した電圧値よりも下げて、電極１２に付着した炭素皮膜Ｃ２を除去する。【選択図】図２</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | PLASMA CVD APPARATUS |
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