PRODUCTION METHOD OF SILICON CARBIDE SINGLE CRYSTAL

To provide a production method of a silicon carbide single crystal in which degradation of crystallinity in a wafer center part is reduced.SOLUTION: In the method for growing SiC single crystal on the seed crystal substrate, a growth vessel is covered by a heat insulator having a hole for measuring temperature on a top part, a seed crystal substrate is arranged in the center of an upper part in the growth vessel, and a silicon carbide raw material is arranged and sublimed at the bottom part of the growth vessel. The hole is provided shifted to a position toward an outer peripheral side from a center of the seed crystal substrate so that the center position of the hole and the center position of the seed crystal substrate are shifted from each other, and SiC singe crystal substrate having a main face tilted by off-angle from (0001) face that is a base face, is used as the seed crystal substrate, and the seed crystal substrate is arranged so that a direction of a parallel component with a main face of a normal vector of the base face of he seed crystal substrate and an eccentric direction of the hole may become the same direction, in the production method for growing the SiC single crystal.SELECTED DRAWING: Figure 1 【課題】ウェーハ中央部の結晶性の劣化が低減化された炭化珪素単結晶の製造方法を提供することを目的とする。【解決手段】温度測定用の穴を上部に設けた断熱材によって成長容器を囲い、該成長容器内の上部の中心に種結晶基板を配置し、成長容器の下部に炭化珪素原材料を配置し昇華させて種結晶基板上にＳｉＣ単結晶を成長させる方法であって、穴の中心位置と種結晶基板の中心位置がずれるように、穴を種結晶基板の中心に対して外周側の位置にずらして設け、種結晶基板として、基底面である｛０００１｝面からオフ角だけ傾斜した主面を有するＳｉＣ単結晶基板を用い、種結晶基板の中心と穴の中心を含む断面視において、種結晶基板の基底面の法線ベクトルの主面と平行な成分の方向と、穴の偏芯方向とが同方向になるように種結晶基板を配置してＳｉＣ単結晶を成長させるＳｉＣ単結晶の製造方法。【選択図】図１