SURFACE EMITTING SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF

To provide a surface emitting semiconductor laser that facilitates the formation of a wiring having a desired shape on the light emitting surface as compared to a case where the wiring extending from the light emitting surface of a mesa structure to the bottom of the mesa structure and the closed wiring on the light emitting surface are formed by one lift-off, and a manufacturing method thereof.SOLUTION: A surface emitting semiconductor laser includes a first semiconductor multilayer reflector 16 of a first conductivity type formed on a substrate 12, an active layer 24 formed on the first semiconductor multilayer reflector 16, a second semiconductor multilayer reflector 26 of a second conductivity type formed on the active layer 24, and a closed electrode 36 formed on the upper surface of the second semiconductor multilayer mirror 26, and further includes a mesa structure M having a depth reaching the bottom surface of the first semiconductor multilayer reflector 16, and a wiring 62 connected to the electrode by a non-closed wiring portion formed on the closed electrode 36, and extending to the substrate 12 through the side surface of the mesa structure M.SELECTED DRAWING: Figure 1 【課題】メサ構造体の光出射面からメサ構造体の底部に延伸する配線と光出射面上の閉形状の配線とを１回のリフトオフで形成する場合と比較して、光出射面に所望の形状の配線を形成しやすくされた、面発光型半導体レーザ、および面発光型半導体レーザの製造方法を提供すること。【解決手段】基板１２上に形成された第１の導電型の第１の半導体多層膜反射鏡１６、第１の半導体多層膜反射鏡１６上に形成された活性層２４、活性層２４上に形成された第２の導電型の第２の半導体多層膜反射鏡２６、および第２の半導体多層膜反射鏡２６の上面に形成された閉形状の電極３６を備えるとともに、第１の半導体多層膜反射鏡１６の底面に達する深さのメサ構造体Ｍと、閉形状の電極３６上に形成された非閉形状の配線部分によって電極と接続され、メサ構造体Ｍの側面を介して基板１２上まで延伸された配線６２と、を含む。【選択図】図１