SEMICONDUCTOR DEVICE
To provide a semiconductor device capable of suppressing characteristic fluctuation of a MOS transistor caused by moisture infiltration at an unintended position, such as cracks on a passivation film, as a starting point.SOLUTION: A semiconductor device 100 comprises: a semiconductor element 10 form...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng ; jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | To provide a semiconductor device capable of suppressing characteristic fluctuation of a MOS transistor caused by moisture infiltration at an unintended position, such as cracks on a passivation film, as a starting point.SOLUTION: A semiconductor device 100 comprises: a semiconductor element 10 formed on a semiconductor substrate; a guard ring metal film 109 formed on an isolation insulating film 111 in an outer peripheral region 117 surrounding the semiconductor element 10; an interlayer insulating film 112 formed on the semiconductor element 10 and the guard ring metal film 109; and a passivation film 115 formed on the interlayer insulating film 112.SELECTED DRAWING: Figure 1
【課題】パッシベーション膜のクラックなど、意図しない箇所を起点とした水分浸入によるＭＯＳトランジスタの特性変動が抑制された半導体装置を提供する。【解決手段】半導体装置１００は、半導体基板に形成された半導体素子１０と、半導体素子１０を囲む外周領域１１７の分離絶縁膜１１１上に形成されたガードリング金属膜１０９と、半導体素子１０とガードリング金属膜１０９の上に形成された層間絶縁膜１１２と層間絶縁膜１１２上に形成されたパッシベーション膜１１５とを備える。【選択図】図１ |
|---|