SINGLE-SIDE POLISHING METHOD OF WAFER

To provide a single-side polishing method of wafer capable of obtaining a wafer having desired ESFQD with high accuracy.SOLUTION: A polishing method of a wafer includes a first step (step S10) of calculating ejection amount of the wafer (=center thickness of wafer-thickness of retainer ring), a seco...

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Bibliographische Detailangaben
Hauptverfasser:	KOSASA KAZUAKI, SUGIMORI KATSUHISA, SATO YOZO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	To provide a single-side polishing method of wafer capable of obtaining a wafer having desired ESFQD with high accuracy.SOLUTION: A polishing method of a wafer includes a first step (step S10) of calculating ejection amount of the wafer (=center thickness of wafer-thickness of retainer ring), a second step (step S20) of determining the density of water-soluble polymer contained in polishing slurry on the basis of the ejection amount, and a third step (step S30) of polishing one side of the wafer by rotating a rotary mold platen and a polishing head relatively, while supplying polishing slurry of the density of the water-soluble polymer determined in the second step onto the polishing pad.SELECTED DRAWING: Figure 2 【課題】所望のＥＳＦＱＤを有するウェーハを高精度に得ることができるウェーハの片面研磨方法を提供する。【解決手段】本発明のウェーハの研磨方法は、ウェーハの突き出し量（＝ウェーハの中心厚み−リテーナリングの厚み）を算出する第１工程（ステップＳ１０）と、突き出し量に基づいて、研磨スラリーに含有される水溶性高分子の濃度を決定する第２工程（ステップＳ２０）と、回転定盤および研磨ヘッドを相対回転させて、研磨パッド上に、第２工程にて決定した水溶性高分子の濃度の研磨スラリーを供給しながら、ウェーハの片面を研磨する第３工程（ステップＳ３０）と、を含むことを特徴とする。【選択図】図２