NIOBIUM NITRIDE-BASED OPTICAL SEMICONDUCTOR AND PRODUCTION METHOD THEREOF

To provide a niobium nitride-based optical semiconductor capable of giving a high photoelectric current at the time of light irradiation.MEANS: A niobium nitride-based optical semiconductor according to the present invention comprises a niobium nitride having a NbNcrystalline structure.SELECTED DRAW...

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Hauptverfasser:	YONEDA YOSHIHIRO, KITAHATA TAKUYA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS THEREFOR CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY COMPOUNDS THEREOF ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	To provide a niobium nitride-based optical semiconductor capable of giving a high photoelectric current at the time of light irradiation.MEANS: A niobium nitride-based optical semiconductor according to the present invention comprises a niobium nitride having a NbNcrystalline structure.SELECTED DRAWING: Figure 2 【課題】光照射時に高い光電流値が得られる窒化ニオブ系光半導体を提供する。【手段】本発明による窒化ニオブ系光半導体は、Ｎｂ４Ｎ５結晶構造を有する窒化ニオブを含む。【選択図】図２