METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
To suppress voids from being formed unevenly in a solder of a semiconductor device.SOLUTION: A method of manufacturing a semiconductor device includes the following steps of: preparing a semiconductor element having an electrode; and soldering the electrode of the semiconductor element to a conducto...
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| Format: | Patent |
| Sprache: | eng ; jpn |
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| Zusammenfassung: | To suppress voids from being formed unevenly in a solder of a semiconductor device.SOLUTION: A method of manufacturing a semiconductor device includes the following steps of: preparing a semiconductor element having an electrode; and soldering the electrode of the semiconductor element to a conductor member. An electrode of the semiconductor element has: an Ni-based metal layer; and an Au-based metal layer that partially covers the Ni-based metal layer in a predetermined pattern (e.g., in a grid, polka dots, stripes, or the like). The Ni-based metal layer is partially exposed.SELECTED DRAWING: Figure 2
【課題】半導体装置のはんだ内部においてボイドが偏って形成されることを抑制する。【解決手段】本明細書が開示する半導体装置の製造方法は、電極を有する半導体素子を用意する工程と、半導体素子の電極を導体部材にはんだ付けする工程とを備える。半導体素子の電極は、Ｎｉ系金属層と、Ｎｉ系金属層を所定のパターン（例えば、格子状、水玉状、ストライプ状など）で部分的に覆うＡｕ系金属層とを有し、Ｎｉ系金属層が部分的に露出する。【選択図】図２ |
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