METHOD FOR MANUFACTURING WAFER
To provide a method for manufacturing a wafer including smoothing a surface of a wafer with a resist material.SOLUTION: A method for manufacturing a wafer is a method for forming a resist film, by a spin coating method, on a hollow wafer formed with a cavity therein and formed with a communication h...
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| creator | HISHINUMA KUNIYUKI |
| description | To provide a method for manufacturing a wafer including smoothing a surface of a wafer with a resist material.SOLUTION: A method for manufacturing a wafer is a method for forming a resist film, by a spin coating method, on a hollow wafer formed with a cavity therein and formed with a communication hole for communicating the inside and outside of the cavity, and includes a first step of forming a resist film on the wafer, and a second step of forming a resist film on the resist film formed in the first step.SELECTED DRAWING: Figure 1
【課題】レジスト材によってウエハの表面を平滑化するウエハの製造方法を提供する。【解決手段】ウエハの製造方法は、内部にキャビティが形成され、前記キャビティの内部と外部とを連通する連通孔が形成される中空のウエハにスピンコート法によってレジスト膜を形成する製造方法であって、前記ウエハにレジスト膜を形成する第１工程と、前記第１工程によって形成された前記レジスト膜上にレジスト膜を形成する第２工程と、を有する。【選択図】図１ |
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【課題】レジスト材によってウエハの表面を平滑化するウエハの製造方法を提供する。【解決手段】ウエハの製造方法は、内部にキャビティが形成され、前記キャビティの内部と外部とを連通する連通孔が形成される中空のウエハにスピンコート法によってレジスト膜を形成する製造方法であって、前記ウエハにレジスト膜を形成する第１工程と、前記第１工程によって形成された前記レジスト膜上にレジスト膜を形成する第２工程と、を有する。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190801&DB=EPODOC&CC=JP&NR=2019129259A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190801&DB=EPODOC&CC=JP&NR=2019129259A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HISHINUMA KUNIYUKI</creatorcontrib><title>METHOD FOR MANUFACTURING WAFER</title><description>To provide a method for manufacturing a wafer including smoothing a surface of a wafer with a resist material.SOLUTION: A method for manufacturing a wafer is a method for forming a resist film, by a spin coating method, on a hollow wafer formed with a cavity therein and formed with a communication hole for communicating the inside and outside of the cavity, and includes a first step of forming a resist film on the wafer, and a second step of forming a resist film on the resist film formed in the first step.SELECTED DRAWING: Figure 1
【課題】レジスト材によってウエハの表面を平滑化するウエハの製造方法を提供する。【解決手段】ウエハの製造方法は、内部にキャビティが形成され、前記キャビティの内部と外部とを連通する連通孔が形成される中空のウエハにスピンコート法によってレジスト膜を形成する製造方法であって、前記ウエハにレジスト膜を形成する第１工程と、前記第１工程によって形成された前記レジスト膜上にレジスト膜を形成する第２工程と、を有する。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJDzdQ3x8HdRcPMPUvB19At1c3QOCQ3y9HNXCHd0cw3iYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBoaWhkaWRqaWjsZEKQIA9Xwh2g</recordid><startdate>20190801</startdate><enddate>20190801</enddate><creator>HISHINUMA KUNIYUKI</creator><scope>EVB</scope></search><sort><creationdate>20190801</creationdate><title>METHOD FOR MANUFACTURING WAFER</title><author>HISHINUMA KUNIYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2019129259A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HISHINUMA KUNIYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HISHINUMA KUNIYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR MANUFACTURING WAFER</title><date>2019-08-01</date><risdate>2019</risdate><abstract>To provide a method for manufacturing a wafer including smoothing a surface of a wafer with a resist material.SOLUTION: A method for manufacturing a wafer is a method for forming a resist film, by a spin coating method, on a hollow wafer formed with a cavity therein and formed with a communication hole for communicating the inside and outside of the cavity, and includes a first step of forming a resist film on the wafer, and a second step of forming a resist film on the resist film formed in the first step.SELECTED DRAWING: Figure 1
【課題】レジスト材によってウエハの表面を平滑化するウエハの製造方法を提供する。【解決手段】ウエハの製造方法は、内部にキャビティが形成され、前記キャビティの内部と外部とを連通する連通孔が形成される中空のウエハにスピンコート法によってレジスト膜を形成する製造方法であって、前記ウエハにレジスト膜を形成する第１工程と、前記第１工程によって形成された前記レジスト膜上にレジスト膜を形成する第２工程と、を有する。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD FOR MANUFACTURING WAFER |
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