RAW MATERIAL SUPPLY METHOD, AND PRODUCTION METHOD OF SILICON SINGLE CRYSTAL

To provide a raw material supply method capable of suppressing breakage of a crucible at a recharge time, or dislocation of a silicon single crystal.SOLUTION: A raw material supply method includes a solidification step for solidifying the surface of silicon melt, a dropping step for dropping a solid...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KANEHARA TAKAHIRO, KAWAKAMI RUI, YOKOYAMA RYUSUKE
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	To provide a raw material supply method capable of suppressing breakage of a crucible at a recharge time, or dislocation of a silicon single crystal.SOLUTION: A raw material supply method includes a solidification step for solidifying the surface of silicon melt, a dropping step for dropping a solid raw material onto a solidified part formed in the solidification step, and a melting step for dissolving the solidified part and the solid raw material. In the dropping step, the solid raw material is dropped in the state where a transverse field of 0.05 tesla or less and over 0 tesla is applied onto the silicon melt.SELECTED DRAWING: Figure 3 【課題】リチャージ時における坩堝の破損やシリコン単結晶の有転位化を抑制できる原料供給方法を提供すること。【解決手段】原料供給方法は、シリコン融液の表面を固化させる固化工程と、固化工程で形成された固化部分に、固形原料を投下する投下工程と、固化部分および固形原料を溶解する融解工程とを備え、投下工程は、０テスラ超０．０５テスラ以下の横磁場をシリコン融液に印加した状態で、固形原料を投下する。【選択図】図３