WAFER PROCESSING METHOD AND WAFER PROCESSING DEVICE

To improve processing yield by suppressing generation of particles caused by contact between a specimen placement surface of a specimen table and a wafer in plasma processing.SOLUTION: A plasma processing device comprises: a vacuum container in which a processing chamber is provided; a specimen table on which a wafer is placed within the processing chamber; a process gas supply part for supplying a process gas into the processing chamber; a high frequency power source for supplying an electric field for forming plasma of the process gas inside of the vacuum container; an electrostatic chuck part which is disposed on the specimen table, with which an opening from which a heat conduction gas flows is formed on its top face and of which the central part is formed in a recessed shape; a coolant supply part for supplying a coolant to a coolant flow passage inside of the specimen table; and a control part. In the plasma processing device, the control part controls a heat conduction gas supply part and controls a temperature of the wafer in accordance with multiple steps for processing the wafer by switching a flow rate of the heat conduction gas or the kind of the heat conduction gas which flows out of the opening between the recess that is formed in the electrostatic chuck part and the electrostatically adsorbed wafer and floats the wafer from the electrostatic chuck part.SELECTED DRAWING: Figure 2 【課題】プラズマ処理において、試料台の試料載置面とウエハとの接触によるパーティクルの発生を抑制して処理の歩留まりを向上させる。【解決手段】内部に処理室を備えた真空容器と、処理室内でウエハを載置する試料台と、処理室の内部に処理ガスを供給する処理ガス供給部と、真空容器内で処理ガスのプラズマを形成する電界を供給する高周波電源と、試料台上に配置されて上面に伝熱ガスを流出させる開口部が形成されて中央部が凹状に形成された静電チャック部と、試料台の内部の冷媒流路に冷媒を供給する冷媒供給部と、制御部とを備えたプラズマ処理装置において、制御部は伝熱ガス供給部を制御して、静電チャック部に形成された凹部と静電吸着されたウエハとの間に開口部から流出させてウエハを静電チャック部から浮上させる伝熱ガスの流量または伝熱ガスの種類を切替えることによりウエハを処理する複数の工程に応じてウエハの温度を制御するようにした。【選択図】図２