METHOD FOR FORMING AMORPHOUS THIN FILM

To provide a film formation method capable of miniaturizing surface roughness of an amorphous thin film.SOLUTION: According to one embodiment of the present invention, a method for forming an amorphous thin film, includes: a step of forming a seed layer onto a surface of an underground by flowing am...

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Bibliographische Detailangaben
Hauptverfasser:	JUNG WOO-DUCK, KIM KI-HO, SHIN SEUNG-WOO, OH WAN-SUK, LEE KOON-WOO, CHOI HO-MIN, YOO CHA-YOUNG, GWON HYUK-LYONG
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a film formation method capable of miniaturizing surface roughness of an amorphous thin film.SOLUTION: According to one embodiment of the present invention, a method for forming an amorphous thin film, includes: a step of forming a seed layer onto a surface of an underground by flowing aminosilane-based gas into the underground; a step of forming a first amorphous thin film of which a boron is doped by supplying a first source gas containing boron based gas in the seed layer; and a step of forming a second amorphous thin film of which the boron is doped by supplying second source gas containing the boron based gas in the first amorphous thin film.SELECTED DRAWING: Figure 3 【課題】非晶質薄膜の表面粗さを最小化することができる成膜方法を提供する。【解決手段】本発明の一実施例によると，非晶質薄膜を形成する方法は，下地にアミノシラン系ガスを流して前記下地の表面にシード層を形成する工程と，前記シード層にボロン系ガスを含む第１ソースガスを供給してボロンがドーピングされた第１非晶質薄膜を形成する工程と，前記第１非晶質薄膜にボロン系ガスを含む第２ソースガスを供給してボロンがドーピングされた第２非晶質薄膜を形成する工程と，を含む。【選択図】図３