SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

To provide a semiconductor device having a large on-state current.SOLUTION: A semiconductor device comprises: a first insulator; an oxide on the first insulator; a first conductor and a second conductor which are located on the oxide; a second insulator on the oxide; a third conductor located on the second insulator and overlap with the oxide; a third insulator which is brought into contac with the first insulator, a lateral face of the oxide, a lateral face of the first conductor, a top face of the first conductor, a lateral face of the second conductor, a top face of the second conductor and a lateral face of the second insulator; and a fourth insulator on the third conductor, the second insulator and the third insulator, in which the fourth insulator brought into contact with top faces of the third conductor, the second insulator and the third insulator.SELECTED DRAWING: Figure 1 【課題】オン電流が大きい半導体装置を提供する。【解決手段】第１の絶縁体と、第１の絶縁体上の酸化物と、酸化物上の第１の導電体および第２の導電体と、酸化物上の第２の絶縁体と、第２の絶縁体上に位置し、酸化物と重なる第３の導電体と、第１の絶縁体、酸化物の側面、第１の導電体の側面、第１の導電体の上面、第２の導電体の側面、第２の導電体の上面、および第２の絶縁体の側面と接する、第３の絶縁体と、第３の導電体、第２の絶縁体、および第３の絶縁体上の第４の絶縁体と、を有し、第４の絶縁体は、第３の導電体、第２の絶縁体、および第３の絶縁体のそれぞれの上面と接している、半導体装置。【選択図】図１