FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD

To provide a film deposition apparatus and film deposition method, capable of improving the quality of a film while suppressing the aggregation of raw material ceramic powder.SOLUTION: A film deposition apparatus comprises: a mixing part 11 for forming a mixed ceramic powder P3 obtained by mixing a...

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Bibliographische Detailangaben
Hauptverfasser:	MEGA MASAHIKO, BONO TAKUMI, TANIGAWA HIDETSUGU
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a film deposition apparatus and film deposition method, capable of improving the quality of a film while suppressing the aggregation of raw material ceramic powder.SOLUTION: A film deposition apparatus comprises: a mixing part 11 for forming a mixed ceramic powder P3 obtained by mixing a material including an organic compound applying lubricity to a raw material ceramic powder P1 used as an additive P2 with the raw material ceramic powder P1 having an average particle size of 10 μm or less; an ejector 20 for ejecting the mixed ceramic powder P3 toward the surface of a base material B; and a heater 30 for heating the mixed ceramic powder P3 ejected from the ejector 20 to evaporate the organic compound of the additive P2 included in the mixed ceramic powder P3.SELECTED DRAWING: Figure 1 【課題】原料セラミクス粉末の凝集を抑制しつつ被膜の品質を向上することができる成膜装置及び成膜方法を提供する。【解決手段】平均粒子径が１０μｍ以下の原料セラミクス粉末Ｐ１に、前記原料セラミクス粉末Ｐ１に潤滑性を付与する有機化合物を含む材料を添加材Ｐ２として混合した混合セラミクス粉末Ｐ３を生成する混合部１１と、前記混合セラミクス粉末Ｐ３を基材Ｂの表面に向けて噴射する噴射装置２０と、前記噴射装置２０から噴射された前記混合セラミクス粉末Ｐ３を加熱して、前記混合セラミクス粉末Ｐ３に含まれる前記添加材Ｐ２の前記有機化合物を蒸発させる加熱装置３０と、を備える。【選択図】図１