SEMICONDUCTOR DEVICE

To examine internal stress of a semiconductor device including a conductive film, which is affected by the internal stress of the conductive film.SOLUTION: The semiconductor device including an n-channel type TFT provided on an insulating surface is so configured that impurity elements are introduced to a conductive film, for instance, a gate electrode so that a semiconductor film is subjected to a pulling stress. The semiconductor device including a p-channel type TFT provided on an insulating surface is so configured that impurity elements are introduced to a conductive film, for instance, a gate electrode so that a semiconductor film is subjected to a compression stress.SELECTED DRAWING: Figure 6 【課題】導電膜を有する半導体装置は、導電膜の内部応力の影響を受ける。内部応力について検討する。【解決手段】絶縁表面上に設けられたｎチャネル型ＴＦＴを有する半導体装置は、半導体膜が引っ張り応力を受けるように、導電膜、例えばゲート電極に不純物元素が導入され、絶縁表面上に設けられたｐチャネル型ＴＦＴを有する半導体装置は、半導体膜が圧縮応力を受けるように、導電膜、例えばゲート電極に不純物が導入されている。【選択図】図６