SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
To provide a stable and reliable semiconductor device or display device having good electrical characteristics.SOLUTION: In a semiconductor device, a metal oxide layer 114, an insulating layer 110, and a conductive layer 112 are stacked over a region 108i of a semiconductor layer 108. A first layer...
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| creator | KAMINAGA MASAMI UBUNAI TOSHIMITSU YAMAZAKI SHUNPEI HIZUKA JUNICHI NAKAZAWA YASUTAKA |
| description | To provide a stable and reliable semiconductor device or display device having good electrical characteristics.SOLUTION: In a semiconductor device, a metal oxide layer 114, an insulating layer 110, and a conductive layer 112 are stacked over a region 108i of a semiconductor layer 108. A first layer 116 is formed in contact with a region 108n that does not overlap with the insulating layer 110 of the semiconductor layer 108 and a metal oxide layer 108C, and a heat treatment is performed so that the resistance of the region 108n and the metal oxide layer 108 C is reduced to form an insulating layer 118, and a conductive layer 120b electrically connected to the region 108n is formed over the insulating layer 118. Here, the first layer 116 is formed to include at least one of aluminum, titanium, tantalum, and tungsten.SELECTED DRAWING: Figure 9
【課題】電気特性が良好で安定した信頼性の高い半導体装置または表示装置を提供する。【解決手段】半導体装置において、半導体層１０８の領域１０８ｉ上に、金属酸化物層１１４と絶縁層１１０と導電層１１２とを積層して形成する。半導体層１０８の絶縁層１１０と重畳しない領域１０８ｎと、金属酸化物層１０８Ｃに接して第１の層１１６を形成し、領域１０８ｎと金属酸化物層１０８Ｃとが低抵抗化するように加熱処理を行ない、絶縁層１１８を形成し、絶縁層１１８上に、領域１０８ｎと電気的に接続する導電層１２０ｂを形成する。ここで、第１の層１１６は、アルミニウム、チタン、タンタル、及びタングステンの少なくとも一を含むように形成する。【選択図】図９ |
| format | Patent |
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【課題】電気特性が良好で安定した信頼性の高い半導体装置または表示装置を提供する。【解決手段】半導体装置において、半導体層１０８の領域１０８ｉ上に、金属酸化物層１１４と絶縁層１１０と導電層１１２とを積層して形成する。半導体層１０８の絶縁層１１０と重畳しない領域１０８ｎと、金属酸化物層１０８Ｃに接して第１の層１１６を形成し、領域１０８ｎと金属酸化物層１０８Ｃとが低抵抗化するように加熱処理を行ない、絶縁層１１８を形成し、絶縁層１１８上に、領域１０８ｎと電気的に接続する導電層１２０ｂを形成する。ここで、第１の層１１６は、アルミニウム、チタン、タンタル、及びタングステンの少なくとも一を含むように形成する。【選択図】図９</description><language>eng ; jpn</language><subject>ADVERTISING ; BASIC ELECTRIC ELEMENTS ; CRYPTOGRAPHY ; DISPLAY ; DISPLAYING ; EDUCATION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; LABELS OR NAME-PLATES ; PHYSICS ; SEALS ; SEMICONDUCTOR DEVICES ; SIGNS</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190516&DB=EPODOC&CC=JP&NR=2019075532A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25553,76306</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190516&DB=EPODOC&CC=JP&NR=2019075532A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAMINAGA MASAMI</creatorcontrib><creatorcontrib>UBUNAI TOSHIMITSU</creatorcontrib><creatorcontrib>YAMAZAKI SHUNPEI</creatorcontrib><creatorcontrib>HIZUKA JUNICHI</creatorcontrib><creatorcontrib>NAKAZAWA YASUTAKA</creatorcontrib><title>SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><description>To provide a stable and reliable semiconductor device or display device having good electrical characteristics.SOLUTION: In a semiconductor device, a metal oxide layer 114, an insulating layer 110, and a conductive layer 112 are stacked over a region 108i of a semiconductor layer 108. A first layer 116 is formed in contact with a region 108n that does not overlap with the insulating layer 110 of the semiconductor layer 108 and a metal oxide layer 108C, and a heat treatment is performed so that the resistance of the region 108n and the metal oxide layer 108 C is reduced to form an insulating layer 118, and a conductive layer 120b electrically connected to the region 108n is formed over the insulating layer 118. Here, the first layer 116 is formed to include at least one of aluminum, titanium, tantalum, and tungsten.SELECTED DRAWING: Figure 9
【課題】電気特性が良好で安定した信頼性の高い半導体装置または表示装置を提供する。【解決手段】半導体装置において、半導体層１０８の領域１０８ｉ上に、金属酸化物層１１４と絶縁層１１０と導電層１１２とを積層して形成する。半導体層１０８の絶縁層１１０と重畳しない領域１０８ｎと、金属酸化物層１０８Ｃに接して第１の層１１６を形成し、領域１０８ｎと金属酸化物層１０８Ｃとが低抵抗化するように加熱処理を行ない、絶縁層１１８を形成し、絶縁層１１８上に、領域１０８ｎと電気的に接続する導電層１２０ｂを形成する。ここで、第１の層１１６は、アルミニウム、チタン、タンタル、及びタングステンの少なくとも一を含むように形成する。【選択図】図９</description><subject>ADVERTISING</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CRYPTOGRAPHY</subject><subject>DISPLAY</subject><subject>DISPLAYING</subject><subject>EDUCATION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>LABELS OR NAME-PLATES</subject><subject>PHYSICS</subject><subject>SEALS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SIGNS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgLdvX1dPb3cwl1DvEPUnBxDfN0dtVRcPEMDvBxjITzHf1cFHwd_ULdHJ1DQoM8_dwVfF1DPPxdFPzdFLCZwMPAmpaYU5zKC6W5GZTcXEOcPXRTC_LjU4sLEpNT81JL4r0CjAwMLQ3MTU2NjRyNiVIEAOTGMQ4</recordid><startdate>20190516</startdate><enddate>20190516</enddate><creator>KAMINAGA MASAMI</creator><creator>UBUNAI TOSHIMITSU</creator><creator>YAMAZAKI SHUNPEI</creator><creator>HIZUKA JUNICHI</creator><creator>NAKAZAWA YASUTAKA</creator><scope>EVB</scope></search><sort><creationdate>20190516</creationdate><title>SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><author>KAMINAGA MASAMI ; UBUNAI TOSHIMITSU ; YAMAZAKI SHUNPEI ; HIZUKA JUNICHI ; NAKAZAWA YASUTAKA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2019075532A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2019</creationdate><topic>ADVERTISING</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CRYPTOGRAPHY</topic><topic>DISPLAY</topic><topic>DISPLAYING</topic><topic>EDUCATION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>LABELS OR NAME-PLATES</topic><topic>PHYSICS</topic><topic>SEALS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SIGNS</topic><toplevel>online_resources</toplevel><creatorcontrib>KAMINAGA MASAMI</creatorcontrib><creatorcontrib>UBUNAI TOSHIMITSU</creatorcontrib><creatorcontrib>YAMAZAKI SHUNPEI</creatorcontrib><creatorcontrib>HIZUKA JUNICHI</creatorcontrib><creatorcontrib>NAKAZAWA YASUTAKA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAMINAGA MASAMI</au><au>UBUNAI TOSHIMITSU</au><au>YAMAZAKI SHUNPEI</au><au>HIZUKA JUNICHI</au><au>NAKAZAWA YASUTAKA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><date>2019-05-16</date><risdate>2019</risdate><abstract>To provide a stable and reliable semiconductor device or display device having good electrical characteristics.SOLUTION: In a semiconductor device, a metal oxide layer 114, an insulating layer 110, and a conductive layer 112 are stacked over a region 108i of a semiconductor layer 108. A first layer 116 is formed in contact with a region 108n that does not overlap with the insulating layer 110 of the semiconductor layer 108 and a metal oxide layer 108C, and a heat treatment is performed so that the resistance of the region 108n and the metal oxide layer 108 C is reduced to form an insulating layer 118, and a conductive layer 120b electrically connected to the region 108n is formed over the insulating layer 118. Here, the first layer 116 is formed to include at least one of aluminum, titanium, tantalum, and tungsten.SELECTED DRAWING: Figure 9
【課題】電気特性が良好で安定した信頼性の高い半導体装置または表示装置を提供する。【解決手段】半導体装置において、半導体層１０８の領域１０８ｉ上に、金属酸化物層１１４と絶縁層１１０と導電層１１２とを積層して形成する。半導体層１０８の絶縁層１１０と重畳しない領域１０８ｎと、金属酸化物層１０８Ｃに接して第１の層１１６を形成し、領域１０８ｎと金属酸化物層１０８Ｃとが低抵抗化するように加熱処理を行ない、絶縁層１１８を形成し、絶縁層１１８上に、領域１０８ｎと電気的に接続する導電層１２０ｂを形成する。ここで、第１の層１１６は、アルミニウム、チタン、タンタル、及びタングステンの少なくとも一を含むように形成する。【選択図】図９</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADVERTISING BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LABELS OR NAME-PLATES PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS |
| title | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
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