FILM DEPOSITION METHOD OF METALLIC FILM AND FILM DEPOSITION APPARATUS OF METALLIC FILM

To provide a film deposition method of a metallic film, that can form the metallic film to be arranged within a desired range of a substrate.SOLUTION: The film deposition method comprises: locating a solid electrolyte film 13 between an anode 11 and a substrate W; applying an electric voltage between the anode 11 and the substrate W in a state where the solid electrolyte film 13 is pressed against the substrate W, so as to deposit the metallic film F onto the substrate W. In the deposition method, the solid electrolyte film 13 is used, wherein the solid electrolyte film has a first portion 13a made of an ion permeable material, and a second portion 13b that is made of a material having electrical insulation and low permeability to a metal ion and that is embedded in the first portion 13a so as to be exposed from a surface of the solid electrolyte film 13 on a side facing the substrate W. In the solid electrolyte film 13, metal ions passing through the first portion 13a pass around the second portion 13b when the electric voltage is applied, and the second portion 13b is formed on the surface of the material W facing the second portion 13b such that a metal of the metal ion is deposited.SELECTED DRAWING: Figure 4 【課題】基材の所望の範囲に収まるように、金属皮膜を成膜することができる金属皮膜の成膜方法を提供する。【解決手段】陽極１１と基材Ｗとの間に固体電解質膜１３を配置し、固体電解質膜１３を基材Ｗに押圧した状態で、陽極１１と基材Ｗとの間に電圧を印加することにより、金属皮膜Ｆを基材Ｗに成膜する。この成膜方法では、イオン透過性材料からなる第１部分１３ａと、電気絶縁性を有しかつ金属イオンの透過性が低い材料からなり、基材Ｗと対向する側の固体電解質膜１３の表面から露出するように、第１部分１３ａに埋設された第２部分１３ｂとを有した固体電解質膜１３を用いる。固体電解質膜１３は、電圧を印加した際に、第１部分１３ａを通過する金属イオンが、第２部分１３ｂに周りを通過し、第２部分１３ｂに対向する基材Ｗの表面に、金属イオンの金属が析出するように、第２部分１３ｂが形成されている。【選択図】図４