METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
To provide a method for manufacturing a semiconductor device, in which a hole concentration can be increased by recovering damage applied to a semiconductor due to ion implantation.SOLUTION: A method for manufacturing a semiconductor device includes: an ion implantation step of performing ion implan...
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| Format: | Patent |
| Sprache: | eng ; jpn |
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| Zusammenfassung: | To provide a method for manufacturing a semiconductor device, in which a hole concentration can be increased by recovering damage applied to a semiconductor due to ion implantation.SOLUTION: A method for manufacturing a semiconductor device includes: an ion implantation step of performing ion implantation of p-type impurities of at least one of magnesium (Mg) and calcium (Ca) at an ion implantation concentration of 1E19 cmor less, into a gallium nitride-based semiconductor that contains n-type impurities; and a heat treatment step of heat-treating the semiconductor into which the p-type impurities have been ion-implanted.SELECTED DRAWING: Figure 2
【課題】イオン注入によって半導体に与えられたダメージを回復させ、ホール濃度を高める。【解決手段】ｎ型不純物を含有する窒化ガリウム系の半導体に、１Ｅ１９ｃｍ−３以下のイオン注入濃度で、マグネシウム（Ｍｇ）及びカルシウム（Ｃａ）のうち少なくとも一方のｐ型不純物をイオン注入するイオン注入工程と、ｐ型不純物がイオン注入された半導体を熱処理する熱処理工程と、を行う。【選択図】図２ |
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