SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
To reduce a destruction rate of a pattern which is formed on a surface of a substrate, and to improve cleanness of the substrate after drying.SOLUTION: Liquid of a hydrophobic agent is supplied onto a surface of a substrate W, thereby forming a liquid film of the hydrophobic agent covering the entir...
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Zusammenfassung: | To reduce a destruction rate of a pattern which is formed on a surface of a substrate, and to improve cleanness of the substrate after drying.SOLUTION: Liquid of a hydrophobic agent is supplied onto a surface of a substrate W, thereby forming a liquid film of the hydrophobic agent covering the entire surface of the substrate W. While maintaining a state where the entire surface of the substrate W is covered with the liquid film of the hydrophobic agent, quantity of the liquid of the hydrophobic agent on the substrate W is then decreased. Thereafter, in a state where the quantity of the liquid of the hydrophobic agent on the substrate W is decreased, liquid of a first organic solvent is supplied onto the surface of the substrate W covered with the liquid film of the hydrophobic agent, such that the liquid of the hydrophobic agent on the substrate W is replaced with the liquid of the first organic solvent. The substrate W is dried thereafter.SELECTED DRAWING: Figure 5
【課題】基板の表面に形成されたパターンの倒壊率を低下させることができ、乾燥後の基板の清浄度を高める。【解決手段】疎水化剤の液体を基板Wの表面に供給することにより、基板Wの表面全域を覆う疎水化剤の液膜を形成する。その後、基板Wの表面全域が疎水化剤の液膜で覆われている状態を維持しながら、基板W上の疎水化剤の液量を減少させる。その後、基板W上の疎水化剤の液量が減少した状態で、第1有機溶剤の液体を疎水化剤の液膜で覆われている基板Wの表面に供給することにより、基板W上の疎水化剤の液体を第1有機溶剤の液体で置換する。その後、基板Wを乾燥させる。【選択図】図5 |
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