SEMICONDUCTOR DEVICE

To provide a semiconductor device that has a stable drain current in a saturation region of a transistor.SOLUTION: A semiconductor device comprises: a semiconductor part of a first conductivity type; a first semiconductor layer and a second semiconductor layer of a second conductivity type that are provided at an upper layer part of the semiconductor part so as to be separated from each other; a gate electrode provided on the semiconductor part; a first contact penetrating through the gate electrode, and whose lower part is arranged in the first semiconductor layer, and whose lower end is connected with the first semiconductor layer; a second contact penetrating through the gate electrode, and whose lower part is arranged in the second semiconductor layer, and whose lower end is connected with the second semiconductor layer; a first insulating film provided between a lateral face of the first contact and the first semiconductor layer and between the first contact and the gate electrode; and a second insulating film provided between a lateral face of the second contact and the second semiconductor layer and between the second contact and the gate electrode.SELECTED DRAWING: Figure 1 【課題】トランジスタの飽和領域において、ドレイン電流が安定な半導体装置を提供する。【解決手段】半導体装置は、第１導電形の半導体部分と、前記半導体部分の上層部分に相互に離隔して設けられた第２導電形の第１半導体層及び第２半導体層と、前記半導体部分上に設けられたゲート電極と、前記ゲート電極を貫通し、下部が前記第１半導体層内に配置され、下端が前記第１半導体層に接続された第１コンタクトと、前記ゲート電極を貫通し、下部が前記第２半導体層内に配置され、下端が前記第２半導体層に接続された第２コンタクトと、前記第１コンタクトの側面と前記第１半導体層との間、及び、前記第１コンタクトと前記ゲート電極との間に設けられた第１絶縁膜と、前記第２コンタクトの側面と前記第２半導体層との間、及び、前記第２コンタクトと前記ゲート電極との間に設けられた第２絶縁膜と、を備える。【選択図】図１