SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

To provide a semiconductor device with improved electric characteristics, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device according to an embodiment comprises a substrate, a first conductive film, a second conductive film, and a contact plug. The first conductive f...

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1. Verfasser: INOHARA MASAHIRO
Format: Patent
Sprache:eng ; jpn
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator INOHARA MASAHIRO
description To provide a semiconductor device with improved electric characteristics, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device according to an embodiment comprises a substrate, a first conductive film, a second conductive film, and a contact plug. The first conductive film is provided on the substrate and contains metal silicide. The second conductive film is provided on the first conductive film, and contains a metal that has a bond dissociation energy larger than that of the metal silicide. The contact plug is provided on the second conductive film, and has a main body part and a peripheral part located on a surface of the main body part and containing titanium.SELECTED DRAWING: Figure 1 【課題】電気特性が向上した半導体装置及びその製造方法を提供する。【解決手段】実施形態に係る半導体装置は、基板と、第１導電膜と、第２導電膜と、コンタクトプラグと、を備える。前記第１導電膜は、前記基板上に設けられ、金属シリサイドを含む。前記第２導電膜は、前記第１導電膜上に設けられ、前記金属シリサイドの結合解離エネルギーより大きい結合解離エネルギーを有する金属を含む。前記コンタクトプラグは、前記第２導電膜上に設けられ、本体部と、本体部の表面に位置してチタンを含む周辺部と、を有する。【選択図】図１
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The first conductive film is provided on the substrate and contains metal silicide. The second conductive film is provided on the first conductive film, and contains a metal that has a bond dissociation energy larger than that of the metal silicide. The contact plug is provided on the second conductive film, and has a main body part and a peripheral part located on a surface of the main body part and containing titanium.SELECTED DRAWING: Figure 1 【課題】電気特性が向上した半導体装置及びその製造方法を提供する。【解決手段】実施形態に係る半導体装置は、基板と、第１導電膜と、第２導電膜と、コンタクトプラグと、を備える。前記第１導電膜は、前記基板上に設けられ、金属シリサイドを含む。前記第２導電膜は、前記第１導電膜上に設けられ、前記金属シリサイドの結合解離エネルギーより大きい結合解離エネルギーを有する金属を含む。前記コンタクトプラグは、前記第２導電膜上に設けられ、本体部と、本体部の表面に位置してチタンを含む周辺部と、を有する。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190404&amp;DB=EPODOC&amp;CC=JP&amp;NR=2019054152A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190404&amp;DB=EPODOC&amp;CC=JP&amp;NR=2019054152A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>INOHARA MASAHIRO</creatorcontrib><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME</title><description>To provide a semiconductor device with improved electric characteristics, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device according to an embodiment comprises a substrate, a first conductive film, a second conductive film, and a contact plug. 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The contact plug is provided on the second conductive film, and has a main body part and a peripheral part located on a surface of the main body part and containing titanium.SELECTED DRAWING: Figure 1 【課題】電気特性が向上した半導体装置及びその製造方法を提供する。【解決手段】実施形態に係る半導体装置は、基板と、第１導電膜と、第２導電膜と、コンタクトプラグと、を備える。前記第１導電膜は、前記基板上に設けられ、金属シリサイドを含む。前記第２導電膜は、前記第１導電膜上に設けられ、前記金属シリサイドの結合解離エネルギーより大きい結合解離エネルギーを有する金属を含む。前記コンタクトプラグは、前記第２導電膜上に設けられ、本体部と、本体部の表面に位置してチタンを含む周辺部と、を有する。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAMdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UfB3U_B19At1c3QOCQ3y9HNXCPFwVQh29HXlYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBoaWBqYmhqZGjsZEKQIAzfwpAQ</recordid><startdate>20190404</startdate><enddate>20190404</enddate><creator>INOHARA MASAHIRO</creator><scope>EVB</scope></search><sort><creationdate>20190404</creationdate><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME</title><author>INOHARA MASAHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2019054152A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>INOHARA MASAHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>INOHARA MASAHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME</title><date>2019-04-04</date><risdate>2019</risdate><abstract>To provide a semiconductor device with improved electric characteristics, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device according to an embodiment comprises a substrate, a first conductive film, a second conductive film, and a contact plug. 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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