SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
To provide a semiconductor device with improved electric characteristics, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device according to an embodiment comprises a substrate, a first conductive film, a second conductive film, and a contact plug. The first conductive f...
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| Format: | Patent |
| Sprache: | eng ; jpn |
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| Zusammenfassung: | To provide a semiconductor device with improved electric characteristics, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device according to an embodiment comprises a substrate, a first conductive film, a second conductive film, and a contact plug. The first conductive film is provided on the substrate and contains metal silicide. The second conductive film is provided on the first conductive film, and contains a metal that has a bond dissociation energy larger than that of the metal silicide. The contact plug is provided on the second conductive film, and has a main body part and a peripheral part located on a surface of the main body part and containing titanium.SELECTED DRAWING: Figure 1
【課題】電気特性が向上した半導体装置及びその製造方法を提供する。【解決手段】実施形態に係る半導体装置は、基板と、第１導電膜と、第２導電膜と、コンタクトプラグと、を備える。前記第１導電膜は、前記基板上に設けられ、金属シリサイドを含む。前記第２導電膜は、前記第１導電膜上に設けられ、前記金属シリサイドの結合解離エネルギーより大きい結合解離エネルギーを有する金属を含む。前記コンタクトプラグは、前記第２導電膜上に設けられ、本体部と、本体部の表面に位置してチタンを含む周辺部と、を有する。【選択図】図１ |
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