EVALUATION METHOD OF SEMICONDUCTOR SUBSTRATE AND EVALUATION METHOD OF DEVICE CHIP

To reduce the time required for measuring the physical properties of the surface layer of a semiconductor substrate.SOLUTION: An evaluation method of a semiconductor substrate is a method for evaluating the physical properties formed on the surface layer of the semiconductor substrate, in a semicond...

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Bibliographische Detailangaben
Hauptverfasser: KODAMA SHOICHI, KIM YONG SUK
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To reduce the time required for measuring the physical properties of the surface layer of a semiconductor substrate.SOLUTION: An evaluation method of a semiconductor substrate is a method for evaluating the physical properties formed on the surface layer of the semiconductor substrate, in a semiconductor substrate where a device layer is formed on the surface. The evaluation method of a semiconductor substrate includes a sticking step ST2 for sticking the device layer side to a support substrate, a thinning step ST3 for making the semiconductor substrate thinner than the finish thickness after executing the sticking step ST2, and an evaluation step ST4 for evaluating the characteristics of the semiconductor substrate by irradiating the back side of the semiconductor substrate with light and measuring the scattering light.SELECTED DRAWING: Figure 5 【課題】半導体基板の表層の物性を測定するためにかかる所要時間を抑制することができること。【解決手段】半導体基板の評価方法は、表面にデバイス層が形成された半導体基板において、半導体基板の表層に形成される物性を評価する方法である。半導体基板の評価方法は、デバイス層側をサポート基板に貼り付ける貼り付けステップST2と、貼り付けステップST2の実施後に、半導体基板を仕上げ厚みよりも薄化する薄化ステップST3と、半導体基板の裏面側から光を照射し散乱光を測定することで半導体基板の物性の特性を評価する評価ステップST4と、を備える。【選択図】図5