ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF

To provide an electronic device which is superior in stability by reducing transmission of moisture and oxygen from a joint part, and a manufacturing method thereof.SOLUTION: An electronic device 10 includes a base material 11, and, on the base material, an electronic element body 13, an electrode 1...

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Bibliographische Detailangaben
1. Verfasser:	ITO HIROHIDE
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide an electronic device which is superior in stability by reducing transmission of moisture and oxygen from a joint part, and a manufacturing method thereof.SOLUTION: An electronic device 10 includes a base material 11, and, on the base material, an electronic element body 13, an electrode 14 connected to the electronic element body, a silicon-containing film 23 covering at least the electrode, and a seal base material 12 joined to the base material through a joint part 16 provided at a periphery of the electronic element body, and having a silicon-containing film to seal the electronic element body. At least one of the base material and sealing base material is gas-barrier film, and the silicon-containing film has a composition represented by chemical formula (1). In the formula, x, y and z are each an atomic ratio of oxygen, nitrogen or carbon to silicon, and satisfy 0≤y