SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

To improve short-circuit resistance in an SiC semiconductor device.SOLUTION: An n-type source region 8 is configured by a first source region 8a with relatively low concentration, and a second source region 8b with higher concentration than the first source region 8a. Thereby, a saturation current v...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TAKEUCHI YUICHI, YAMASHITA YUSUKE, KAJI AIKO, SUZUKI RYUTA, MINOTANI SHUHEI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!